The book reports modeling and simulation techniques for substrate noise coupling effects in RFICs and introduces isolation structures and design guides to mitigate such effects with the ultimate goal of enhancing the yield of RF and mixed signal SoCs. The book further reports silicon measurements, and new test and noise isolation structures. To the authors’ knowledge, this is the first title devoted to the topic of substrate noise coupling in RFICs as part of a large SoC.
Figure 5.9 shows the simulation vs. measurement data after de-embedding.
Appendix B explains the measurement details. The inductor parameters are
shown on the plots and they vary from 180 m outer diameter to 120 m, and coil
width of 11 ...
Low-Voltage CMOS Operational Amplifiers: Theory, Design and Implementation discusses both single and two-stage architectures. Opamps with constant-gm input stage are designed and their excellent performance over the rail-to-rail input common mode range is demonstrated. The first set of CMOS constant-gm input stages was introduced by a group from Technische Universiteit, Delft and Universiteit Twente, the Netherlands. These earlier versions of circuits are discussed, along with new circuits developed at the Ohio State University. The design, fabrication (MOSIS Tiny Chips), and characterization of the new circuits are now complete. Basic analog integrated circuit design concepts should be understood in order to fully appreciate the work presented. However, the topics are presented in a logical order and the circuits are explained in great detail, so that Low-Voltage CMOS Operational Amplifiers can be read and enjoyed by those without much experience in analog circuit design. It is an invaluable reference book, and may be used as a text for advanced courses on the subject.
The bottom part of the circuit diagram is the output stage shown in Figure 6.9 and
the input stage is shown at the top part of the figure. As in opamp 1, Mp provides
bias current to the p-channel differential pair consisting of M, and M\a, while Mg ...
RF CMOS Power Amplifiers: Theory Design and Implementation focuses on the design procedure and the testing issues of CMOS RF power amplifiers. This is the first monograph addressing RF CMOS power amplifier design for emerging wireless standards. The focus on power amplifiers for short is distance wireless personal and local area networks (PAN and LAN), however the design techniques are also applicable to emerging wide area networks (WAN) infrastructure using micro or pico cell networks. The book discusses CMOS power amplifier design principles and theory and describes the architectures and tardeoffs in designing linear and nonlinear power amplifiers. It then details design examples of RF CMOS power amplifiers for short distance wireless applications (e, g., Bluetooth, WLAN) including designs for multi-standard platforms. Design aspects of RF circuits in deep submicron CMOS are also discussed. RF CMOS Power Amplifiers: Theory Design and Implementation serves as a reference for RF IC design engineers and RD and R&D managers in industry, and for graduate students conducting research in wireless semiconductor IC design in general and with CMOS technology in particular.
Mona M. Hella, Mohammed Ismail. Chapter 2 POWER AMPLIFIER; CONCEPTS
AND CHALLENGES 1. Introduction Power Amplifiers are part of the transmitter
front-end, and are used to amplify the signal being transmitted so that it can be ...
As MOS devices are scaled to meet increasingly demanding circuit specifications, process variations have a greater effect on the reliability of circuit performance. For this reason, statistical techniques are required to design integrated circuits with maximum yield. Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits describes a statistical circuit simulation and optimization environment for VLSI circuit designers. The first step toward accomplishing statistical circuit design and optimization is the development of an accurate CAD tool capable of performing statistical simulation. This tool must be based on a statistical model which comprehends the effect of device and circuit characteristics, such as device size, bias, and circuit layout, which are under the control of the circuit designer on the variability of circuit performance. The distinctive feature of the CAD tool described in this book is its ability to accurately model and simulate the effect in both intra- and inter-die process variability on analog/digital circuits, accounting for the effects of the aforementioned device and circuit characteristics. Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits serves as an excellent reference for those working in the field, and may be used as the text for an advanced course on the subject.
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This book is devoted to the subject of adaptive techniques for smart analog and mixed signal design whereby fully functional first-pass silicon is achievable. To our knowledge, this is the first book devoted to this subject. The techniques described should lead to quantum improvement in design productivity of complex analog and mixed signal systems while significantly cutting the spiraling costs of product development in emerging nanometer technologies.
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